中文
English
BLP016N04LC-Q
BLP016N04LC，低压SGT
Product Manuals
Advantage
- Low On-Resistance
- Low Gate Charge
- Low Reverse Transfer Capacitances
- High Avalanche Ruggedness
- RoHS Product
Introduction
BLP016N04LC, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology and Cu clip bond Assembly technology, which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications.
Sample Apply
